Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction.
Yi-Jung LiuDer-Feng GuoKuei-Yi ChuShiou-Ying ChengJian-Kai LiouLi-Yang ChenTsung-Han TsaiChien-Chang HuangTai-You ChenChi-Shiang HsuTsung-Yuan TsaiWen-Chau LiuPublished in: Displays (2011)