A novel p+ Poly-SiGe Gate CMOS device.
Jing ZhangKaizhou TanSiliu XuZhengfan ZhangYukui LiuGuangbing ChenKaicheng LiHeming ZhangHuiyong HuPublished in: NEMS (2009)
Keyphrases
- metal oxide semiconductor
- cmos technology
- field effect transistors
- mixed signal
- low cost
- integrated circuit
- gate dielectrics
- low power
- power consumption
- vlsi circuits
- nm technology
- high speed
- image sensor
- chip design
- ultra low power
- silicon on insulator
- low voltage
- power supply
- thin film
- steady state
- analog vlsi
- neural network
- multi channel
- parallel processing
- mobile phone
- image processing