A novel p+ Poly-SiGe Gate CMOS device.

Jing Zhang Kaizhou Tan Siliu Xu Zhengfan Zhang Yukui Liu Guangbing Chen Kaicheng Li Heming Zhang Huiyong Hu

Published in: NEMS (2009)

Keyphrases

metal oxide semiconductor
cmos technology
field effect transistors
mixed signal
low cost
integrated circuit
gate dielectrics

low power
power consumption
vlsi circuits
nm technology
high speed
image sensor
chip design

ultra low power
silicon on insulator
low voltage
power supply
thin film
steady state

analog vlsi
neural network
multi channel
parallel processing
mobile phone
image processing