Login / Signup

A 128 kb single-bitline 8.4 fJ/bit 90MHz at 0.3V 7T sense-amplifierless SRAM in 28 nm FD-SOI.

Babak MohammadiOskar AnderssonJoseph NguyenLorenzo CiampoliniAndreia CathelinJoachim Neves Rodrigues
Published in: ESSCIRC (2016)
Keyphrases
  • knowledge base
  • cmos technology
  • nm technology
  • random access memory
  • silicon on insulator
  • image processing
  • motion estimation
  • high speed
  • high frequency