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Reliability Modeling for Ultrathin Gate Oxides Subject to Logistic Degradation Processes with Random Onset Time.
Hao Peng
Qianmei Feng
Published in:
Qual. Reliab. Eng. Int. (2013)
Keyphrases
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gate dielectrics
logistic regression
field effect transistors
uniformly distributed
probability distribution
random matrix theory
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