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High speed stress tolerant 1.6 V - 3.6 V low to high voltage CMOS level shift architecture in 40 nm.

Sushrant Monga
Published in: ISCAS (2012)
Keyphrases
  • high speed
  • high voltage
  • low power
  • cmos technology
  • real time
  • metal oxide
  • nm technology
  • operating conditions
  • analog vlsi
  • management system
  • normal operation
  • power consumption
  • artificial intelligence
  • partial discharge