A 250 mV 7.5 μW 61 dB SNDR SC ΔΣ Modulator Using Near-Threshold-Voltage-Biased Inverter Amplifiers in 130 nm CMOS.
Fridolin MichelMichiel SteyaertPublished in: IEEE J. Solid State Circuits (2012)
Keyphrases
- low voltage
- cmos technology
- power supply
- single phase
- liquid crystal
- pulse width modulation
- metal oxide
- low power
- high speed
- image sensor
- power consumption
- reactive power
- silicon on insulator
- analog vlsi
- metal oxide semiconductor
- low cost
- design considerations
- power system
- electric field
- nm technology
- delta sigma
- intelligent control
- operating conditions
- delay insensitive
- infrared