A 2.5-V 2.0-Gbyte/s 288-Mb packet-based DRAM with enhanced cell efficiency and noise immunity.
Kyehyun KyungHi-Choon LeeKi-Whan SongHo-Sung SongKeewook JungJoon-Seo MoonByoung-Sul KimSung-Burn ChoChanghyun KimSoo-In ChoPublished in: IEEE J. Solid State Circuits (2001)