Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET.
Abdullah Al Mamun MazumderKamal HosenMd. Sherajul IslamJeongwon ParkPublished in: IEEE Access (2022)
Keyphrases
- field effect transistors
- high speed
- steady state
- high density
- mathematical analysis
- sensitivity analysis
- numerical analysis
- high frequency
- real time
- positive and negative
- injection lasers
- chip design
- low cost
- three dimensional
- databases
- markov chain
- low power
- qualitative models
- multiresolution
- transmission line
- bayesian networks
- case study