Login / Signup

Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM.

Donato Francesco FalconeStephan MenzelTommaso StecconiAntonio La PortaLudovico Carraria-MartinottiBert Jan OffreinValeria Bragaglia
Published in: IMW (2023)
Keyphrases
  • design process
  • metal oxide
  • databases
  • circuit design
  • user interface
  • high resolution
  • source code
  • vlsi architecture