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Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports.

Zhiting LinZhiyong ZhuHonglan ZhanChunyu PengXiulong WuYuan YaoJianchao NiuJunning Chen
Published in: IEEE J. Solid State Circuits (2021)
Keyphrases
  • random access memory
  • machine learning
  • data mining
  • memory requirements
  • low memory
  • neural network
  • artificial neural networks
  • computational power
  • memory usage
  • memory size
  • read write