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The Impact of Bit-Line Coupling and Ground Bounce on CMOS SRAM Performance.

Li DingPinaki Mazumder
Published in: VLSI Design (2003)
Keyphrases
  • random access memory
  • power consumption
  • design considerations
  • low power
  • low voltage
  • low cost
  • high speed
  • nm technology
  • line segments
  • d objects
  • embedded dram