STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier.
Yohei UmekiKoji YanagidaShusuke YoshimotoShintaro IzumiMasahiko YoshimotoHiroshi KawaguchiKoji TsunodaToshihiro SugiiPublished in: IEICE Trans. Fundam. Electron. Commun. Comput. Sci. (2014)