Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices.
Davide PontonPierpaolo PalestriDavid EsseniLuca SelmiMarc TieboutBertrand ParvaisDomagoj SiprakGerhard KnoblingerPublished in: IEEE Trans. Circuits Syst. I Regul. Pap. (2009)