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Quasi-three-dimensional modeling of bipolar transistor characteristics.

Alexei D. SadovnikovDavid J. Roulston
Published in: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. (1993)
Keyphrases
  • three dimensional
  • modeling method
  • positive and negative
  • data structure
  • d objects
  • high speed
  • x ray
  • machine learning
  • range images
  • steady state
  • surface reconstruction
  • low power