Login / Signup
GaAs substrate orientation dependence of resonant quasi-level lifetime in 2D-2D InGaAs/GaAs resonant tunneling devices.
L. Bouzaïene
N. Imbarek
Laarbi Sfaxi
Hichem Maaref
Published in:
Microelectron. J. (2006)
Keyphrases
</>
light emitting
injection lasers
gallium arsenide
pulse width
room temperature
frequency band
higher level
mobile devices
levels of abstraction
image registration
field effect transistors
semiconductor devices
learning algorithm
medical images