Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage.
Joseph P. KozakQihao SongRuizhe ZhangJingcun LiuYuhao ZhangPublished in: IRPS (2021)
Keyphrases
- energy distribution
- power system
- non stationary
- high frequency
- cmos technology
- frequency band
- subband
- fundamental frequency
- power consumption
- high density
- field effect transistors
- subband decomposition
- structuring elements
- white noise
- integrated circuit
- low power
- feature selection
- image compression
- fuzzy logic
- multiscale
- image processing