18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution.

Kyomin Sohn Won-Joo Yun Reum Oh Chi-Sung Oh Seong-Young Seo Min-Sang Park Dong-Hak Shin Won-Chang Jung Sang-Hoon Shin Je-Min Ryu Hye-Seung Yu Jae-Hun Jung Kyung-Woo Nam Seouk-Kyu Choi Jaewook Lee Uksong Kang Young-Soo Sohn Jung-Hwan Choi Chi-Wook Kim Seong-Jin Jang Gyo-Young Jin

Published in: ISSCC (2016)

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