A Time-Interleaved Digital-to-Analog Converter up to 118 GS/s With Integrated Analog Multiplexer in 28-nm FD-SOI CMOS Technology.
Daniel WidmannTobias TannertXuan-Quang DuThomas VeigelMarkus GrözingManfred BerrothPublished in: IEEE J. Solid State Circuits (2024)
Keyphrases
- mixed signal
- cmos technology
- low voltage
- silicon on insulator
- low power
- analog to digital converter
- power consumption
- data conversion
- spl times
- multi channel
- parallel processing
- cmos image sensor
- power dissipation
- low cost
- digital circuits
- image sensor
- high speed
- pattern recognition
- real time
- random access memory
- regular expressions