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Vertical Writes: Closing the Throughput Gap between Deeply Scaled STT-MRAM and DRAM.

Engin IpekFlorian LongnosShihai XiaoWei Yang
Published in: IEEE Comput. Archit. Lett. (2018)
Keyphrases
  • design considerations
  • main memory
  • response time
  • low voltage
  • flash memory
  • high density
  • morphological operators
  • neural network
  • random access
  • databases
  • buffer size
  • channel capacity
  • higher throughput