A 28-GHz, 18-dBm, 48% PAE Stacked-FET Power Amplifier with Coupled-Inductor Neutralization in 45-nm SOI CMOS.

Kang Ning James F. Buckwalter

Published in: BCICTS (2018)

Keyphrases

silicon on insulator
ibm power processor
cmos technology
high power
low power
power consumption
high speed
dynamic random access memory
error resilience
instruction set
frequency band
chip design