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Device parameter variations of n-MOSFETS with dog-bone layouts in 65nm and 40nm technologies.

Lele JiangSong WenWei TaiWang LeiLifu ChangYuhua Cheng
Published in: ASICON (2013)
Keyphrases
  • data mining
  • three dimensional
  • silicon on insulator
  • low cost
  • x ray images
  • input parameters
  • future development
  • input device
  • transmission electron microscopy