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4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array.
Sungjoon Kim
Jinwoo Park
Tae-Hyeon Kim
Kyungho Hong
Yeongjin Hwang
Byung-Gook Park
Hyungjin Kim
Published in:
Adv. Intell. Syst. (2022)
Keyphrases
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random access memory
design considerations
low voltage
control strategy
memory access
data model
flash memory