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4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array.

Sungjoon KimJinwoo ParkTae-Hyeon KimKyungho HongYeongjin HwangByung-Gook ParkHyungjin Kim
Published in: Adv. Intell. Syst. (2022)
Keyphrases
  • random access memory
  • design considerations
  • low voltage
  • control strategy
  • memory access
  • data model
  • flash memory