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A 4 GBaud 5 Vpp Class-B Pre-Driver Design for GaN-Based Switching Power Amplifier in 22 nm SOI-CMOS Utilizing LDMOS.
Frowin Buballa
Sebastian Linnhoff
Enne Wittenhagen
Urs Hecht
Friedel Gerfers
Published in:
NEWCAS (2023)
Keyphrases
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silicon on insulator
design process
power consumption
neural network
high speed
circuit design
power dissipation
cmos technology
ibm power processor
single chip
chip design
image processing
embedded systems
high sensitivity
ultra low power