A 29.5 dBm class-E outphasing RF power amplifier with performance enhancement circuits in 45nm CMOS.
Aritra BanerjeeRahmi HezarLei DingNathan SchemmBaher HarounPublished in: ESSCIRC (2014)
Keyphrases
- cmos technology
- power consumption
- low power
- high power
- power dissipation
- high speed
- power reduction
- silicon on insulator
- vlsi circuits
- circuit design
- delay insensitive
- analog vlsi
- chip design
- nm technology
- image enhancement
- image processing
- clock gating
- power supply
- low voltage
- radio frequency
- image sensor
- mixed signal
- neural network