Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy.
Slimane OussalahWalid FilaliElyes GaroudjaBoumediene ZatoutFouaz LekouiRachid AmraniNoureddine SengougaMohamed HeniniPublished in: Microelectron. J. (2022)