A High Efficiency 4-18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology.
Shuoqi ChenVipan KumarYu CaoPublished in: BCICTS (2020)
Keyphrases
- high efficiency
- power consumption
- cmos technology
- nm technology
- low power
- high power
- structuring elements
- high speed
- high accuracy
- power dissipation
- silicon on insulator
- real and synthetic datasets
- density based clustering
- metal oxide semiconductor
- low voltage
- clock frequency
- computer systems
- data processing
- memory space
- power management
- low cost
- power supply
- arbitrary shape
- cost effective
- power distribution
- clock gating