Lasing characteristics of GalnAsP SCH-MQW Laser Diode on Directly-bonded InP/Si Substrate.
Takahiro IshizakiKazuki UchidaHirokazu SugiyamaXu HanNatsuki HayasakaMasaki AikawaMasaki MatsuuraKoki TsushimaTakuto ShiraiKazuhiko ShimomuraPublished in: OECC/PSC (2019)