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A 28 nm Dual-Port SRAM Macro With Screening Circuitry Against Write-Read Disturb Failure Issues.

Yuichiro IshiiHidehiro FujiwaraShinji TanakaYasumasa TsukamotoKoji NiiYuji KiharaKazumasa Yanagisawa
Published in: IEEE J. Solid State Circuits (2011)
Keyphrases
  • read write
  • power consumption
  • key issues
  • data mining
  • data transmission
  • root cause