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Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages.
Xiujuan Huang
Chunsheng Guo
Qian Wen
Shiwei Feng
Yamin Zhang
Published in:
Microelectron. J. (2024)
Keyphrases
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space charge
electric field
silicon dioxide
automatic detection
wide range
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false alarms
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false positives
neural network
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mobile agents
structuring elements
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low signal to noise ratio