A comprehensive study of device variability of sub-5 nm nanosheet transistors and interplay with quantum confinement variation.
Haowen LuoRuihan LiXiangshui MiaoXingsheng WangPublished in: Sci. China Inf. Sci. (2023)
Keyphrases
- metal oxide semiconductor
- low cost
- integrated circuit
- cmos technology
- intra personal
- image sensor
- quantum computing
- low power
- shape variations
- software product line
- semiconductor devices
- equivalent circuit
- silicon on insulator
- field effect transistors
- logic circuits
- intra class
- power consumption
- high density
- shape model
- medical images
- portable devices
- face recognition
- image processing
- information retrieval
- quantum evolutionary algorithm
- data sets