High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width.
Pouya HashemiTakashi AndoKarthik BalakrishnanJohn BruleySebastian U. EngelmannJohn A. OttVijay NarayananD.-G. ParkRenee T. MoEffendi LeobandungPublished in: VLSIC (2015)