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Dummy-Gate Structure to Improve ESD Robustness in a Fully-Salicided 130-nm CMOS Technology without Using Extra Salicide-Blocking Mask.

Hsin-Chyh HsuMing-Dou Ker
Published in: ISQED (2006)
Keyphrases
  • cmos technology
  • low power
  • spl times
  • power consumption
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  • low voltage
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  • image sensor
  • case study
  • pattern recognition
  • mixed signal