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A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%).

Dae-Myeong GeumJinha LimJunho JangSeungyeop AhnSeongKwang KimJoonsup ShimBong Ho KimJuhyuk ParkWoo Jin BaekJaeyong JeongSanghyeon Kim
Published in: VLSI Technology and Circuits (2022)
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