A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%).
Dae-Myeong GeumJinha LimJunho JangSeungyeop AhnSeongKwang KimJoonsup ShimBong Ho KimJuhyuk ParkWoo Jin BaekJaeyong JeongSanghyeon KimPublished in: VLSI Technology and Circuits (2022)