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A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS.

Jefy Alex JayamonAmir AgahBassel HanafiHayg DabagJames F. BuckwalterPeter M. Asbeck
Published in: RWS (2013)
Keyphrases
  • silicon on insulator
  • high power
  • ibm power processor
  • high density
  • low power
  • power consumption
  • power supply
  • cmos technology
  • high speed
  • phase transition
  • error resilience
  • high sensitivity
  • iir filters