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Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor.

Jinxin ZhangHongxia GuoFengqi ZhangChaohui HePei LiYunyi YanHui WangLinxia Zhang
Published in: Sci. China Inf. Sci. (2017)
Keyphrases
  • small number
  • experimental study
  • real time
  • empirical studies
  • theoretical framework
  • formally define
  • steady state
  • event detection