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11.3 A 10nm 32Kb low-voltage logic-compatible anti-fuse one-time-programmable memory with anti-tampering sensing scheme.
Shau-Yu Chou
Yu-Shiang Chen
Jun-Hao Chang
Yu-Der Chih
Tsung-Yung Jonathan Chang
Published in:
ISSCC (2017)
Keyphrases
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low voltage
random access memory
digital images
knowledge base
computer systems
design considerations
authentication scheme
cmos technology
sensor networks
robust watermarking scheme
fragile watermarking scheme
response time
low cost
reverse engineering
leakage current