Login / Signup

DC and linearity performance of a novel Si0.6Ge0.4/Ge Dopingless Tunnel FET for ultra-low voltage applications.

Suruchi SharmaRikmantra BasuBaljit Kaur
Published in: ISDCS (2021)
Keyphrases
  • low voltage
  • high speed
  • design considerations
  • leakage current
  • computer vision
  • power line
  • low cost