Login / Signup
A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line.
Shang-Lin Wu
Chien-Yu Lu
Ming-Hsien Tu
Huan-Shun Huang
Kuen-Di Lee
Yung-Shin Kao
Ching-Te Chuang
Published in:
Microelectron. J. (2016)
Keyphrases
</>
random access memory
knowledge base
real time
data sets
neural network
state space
low voltage
website
line segments
power consumption
low power