A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination.
Qing DongZhehong WangJongyup LimYiqun ZhangMahmut E. SinangilYi-Chun ShihYu-Der ChihTsung-Yung Jonathan ChangDavid T. BlaauwDennis SylvesterPublished in: IEEE J. Solid State Circuits (2019)