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InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers.

Marko SokolichMary Y. ChenRajesh D. RajavelDavid H. ChowYakov RoyterStephen Thomas IIICharles H. FieldsBinqiang ShiSteven S. BuiJames Chingwei LiDonald A. HitkoKenneth R. Elliott
Published in: IEEE J. Solid State Circuits (2004)
Keyphrases
  • integrated circuit
  • metal oxide semiconductor
  • low cost
  • electronic devices
  • cost effective
  • rapid development
  • electron beam
  • case study
  • computer systems
  • multi layer
  • key technologies
  • input device