Login / Signup

Reliability improvement of high value doped polysilicon-based resistors.

E. CarvouF. Le BihanAnne Claire SalaünR. RogelOlivier BonnaudYannick Rey-TauriacXavier GagnardL. Roland
Published in: Microelectron. Reliab. (2002)
Keyphrases
  • random access memory
  • high efficiency
  • integrated circuit