A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM.
Jiahao SongXiyuan TangHaoyang LuoHaoyi ZhangXin QiaoZixuan SunXiangxing YangZihan WuYuan WangRunsheng WangRu HuangPublished in: IEEE J. Solid State Circuits (2024)