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Design of CMOS Device Process Sensor in 28 nm FD-SOI with 2 % of Frequency Spread.

Gowtham Peringattu KalarikkalRohit GoelHitesh Shrimali
Published in: ICECS (2021)
Keyphrases
  • design process
  • silicon on insulator
  • metal oxide semiconductor
  • circuit design
  • power consumption
  • cmos technology
  • cmos image sensor
  • real time
  • high speed
  • data acquisition
  • conceptual model
  • sensor measurements