Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations.
Maximilian LeyJan F. DickJörg SchulzePublished in: MIPRO (2024)
Keyphrases
- mathematical analysis
- molecular dynamics
- field effect transistors
- parameter estimation
- maximum likelihood
- parameter values
- bayesian networks
- sensor networks
- maximum likelihood estimation
- input parameters
- numerical simulations
- protein structure prediction
- design parameters
- fine tuning
- databases
- sensitivity analysis
- expectation maximization
- data warehouse
- search algorithm
- information systems