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Proposal of Analog In-Memory Computing With Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell.
Hao Cai
Yanan Guo
Bo Liu
Mingyang Zhou
Juntong Chen
Xinning Liu
Jun Yang
Published in:
IEEE Trans. Circuits Syst. I Regul. Pap. (2022)
Keyphrases
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random access memory
design considerations
main memory
real time
signal processing
neural network
high speed
computing power
random access