Transimpedance Amplifier with Peaking-Dedicated Inductor in 65-nm CMOS.
Akira TsuchiyaAkitaka HiratsukaKenji TanakaHiroyuki FukuyamaNaoki MiuraHideyuki NosakaHidetoshi OnoderaPublished in: SoCC (2019)
Keyphrases
- cmos technology
- silicon on insulator
- low power
- nm technology
- high power
- metal oxide semiconductor
- high speed
- power consumption
- dynamic range
- low cost
- power supply
- image sensor
- vlsi circuits
- cmos image sensor
- analog vlsi
- circuit design
- low voltage
- parallel processing
- wide dynamic range
- computer vision
- high sensitivity
- hilbert curve
- design considerations