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Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode.
Jinsu Jung
Doowon Lee
Sungho Kim
Hee-Dong Kim
Published in:
IEEE Access (2021)
Keyphrases
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schottky barrier
memory usage
database
mobile devices
website
image sequences
memory requirements
random access
embedded devices