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Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode.

Jinsu JungDoowon LeeSungho KimHee-Dong Kim
Published in: IEEE Access (2021)
Keyphrases
  • schottky barrier
  • memory usage
  • database
  • mobile devices
  • website
  • image sequences
  • memory requirements
  • random access
  • embedded devices