4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology.
Hideaki KurataSatoshi NodaYoshitaka SasagoKazuo OtsugaTsuyoshi AriganeTetsufumi KawamuraTakashi KobayashiHitoshi KumeKazuki HommaTeruhiko ItoYoshinori SakamotoMasahiro ShimizuYoshinori IkedaOsamu TsuchiyaKazunori FurusawaPublished in: IEICE Trans. Electron. (2007)