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All-metal electrodes vertical gate-all-around device with self-catalyzed selective grown InAs NWs array.

Tong LiWenyuan YangYuxiang HanXianghai JiTao YangQing Chen
Published in: Sci. China Inf. Sci. (2018)
Keyphrases
  • field effect transistors
  • high density
  • semiconductor devices
  • steady state
  • mathematical analysis
  • data center
  • thin film
  • programmable logic
  • markov chain
  • real time