Login / Signup

15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node.

Minjune YeoKeonhee ChoGiseok KimWon Joon JoJisang OhSekeon KimKyeongrim BaekSungho ParkSeung Jae YeiSeong-Ook Jung
Published in: ISSCC (2024)
Keyphrases
  • high density
  • low density
  • magnetic recording
  • thin film
  • close proximity
  • case study
  • data processing
  • high power
  • cost effective
  • data center
  • field effect transistors
  • real time
  • computer systems
  • personal computer